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Kaiheng electronics co.,limited

Products >> RF Power Field Effect Transistors(MRFE6VP6300H)

RF Power Field Effect Transistors(MRFE6VP6300H)

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Description
Product Name: RF Power Field Effect Transistors(MRFE6VP6300H)
Supply Ability:
Related proudcts transistor, freescale,
Specifications RF Power Field Effect Transistor
Price Term: FOB
Port of loading: CHINA
Minimum Order 1
Unit Price:

These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aero***ce
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
300 Watts CW Output Power
300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 ¦Ěsec
Capable of 300 Watts CW Operation
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant

Contact Us
Company: Kaiheng electronics co.,limited
Contact: Ms. Kate zhang
Address: Jinhuai
Postcode: 362000
Tel: 86-595-22836155
Fax: 86-595-22836155
E-mail:         


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Tel : 86-595-22836155 Fax : 86-595-22836155
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