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| Product Name: |
RF Power Field Effect Transistors(MRFE6VP6300H)
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| Supply Ability: |
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| Related proudcts |
transistor, freescale, |
| Specifications |
RF Power Field Effect Transistor |
| Price Term: |
FOB |
| Port of loading: |
CHINA |
| Minimum Order |
1 |
| Unit Price: |
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These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aero***ce
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
300 Watts CW Output Power
300 Watts Pulsed Peak Power, 20% Duty Cycle, 100 ¦Ěsec
Capable of 300 Watts CW Operation
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant |
| Company: |
Kaiheng electronics co.,limited
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| Contact: |
Ms. Kate zhang |
| Address: |
Jinhuai |
| Postcode: |
362000 |
| Tel: |
86-595-22836155 |
| Fax: |
86-595-22836155 |
| E-mail: |
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