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Kaiheng electronics co.,limited

All Products >> Freescale

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rf power field effect transistors(mrfe6vp6300h)
rf power field effect transistors(mrfe6vp6300h)
Specification: RF Power Field Effect Transistor
Detail: These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aero***ce and radio/land mobile applications. They are unmatched input and out...

2
wideband rf power ldmos transistors(mrfe6vp61k25h)
wideband rf power ldmos transistors(mrfe6vp61k25h)
Specification: 1.8-600 MHz, 1250 W CW, 50 V
Detail: These high ruggedness devices, MRFE6VP61K25HR6, MRFE6VP61K25HR5, MRFE6VP61K25HSR5 and MRFE6VP61K25GSR5, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aero**...
Showing 1 - 2 of 2, total 1 pages        [First] [Previous] [Next] [Last]
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