Kaiheng electronics co.,limited

Freescale(2)
NXP(8)

Kaiheng electronics co.,limited

Showing 1 - 10 of 10, total 1 pages [First] [Previous] [Next] [Last]

high power transistor,vhf-blf278
Specification: VHF push-pull power MOS transistor
Detail: Dual push-pull silicon N-channel enhancement mode Vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic Caps. The mounting flange provides the common source Connection for the ...

hf / vhf power ldmos transistor(blf574)
Specification: HF / VHF power LDMOS transistor
Detail: A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

broadcast applications,power transistor,power ldmos transistor
Specification: A 1200 W LDMOS power transistor
Detail: A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.

hf/vhf power mos transistor(blf177)
Specification: HF/VHF power MOS transistor
Detail: FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch. APPLICATIONS Designed for industrial and military applications in the HF/VHF frequency r...

rf power field effect transistors(mrfe6vp6300h)
Specification: RF Power Field Effect Transistor
Detail: These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aero***ce and radio/land mobile applications. They are unmatched input and out...

wideband rf power ldmos transistors(mrfe6vp61k25h)
Specification: 1.8-600 MHz, 1250 W CW, 50 V
Detail: These high ruggedness devices, MRFE6VP61K25HR6, MRFE6VP61K25HR5, MRFE6VP61K25HSR5 and MRFE6VP61K25GSR5, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aero**...

power ldmos transistor,broadcast(blf188xr)
Specification: A 1400 W extremely rugged LDMOS power transistor for broadcast
Detail: A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficien...

uhf power ldmos transistor,860mhz(blf861a)
Specification: UHF power LDMOS transistor
Detail: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. Features and benefits High power gain Easy power control ...

power ldmos transistor£¬650w,600mhz,broadcast,hf/vhf(blf184xr)
Specification: A 650 W extremely rugged LDMOS power transistor for broadcast an
Detail: Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability BLF184XR Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002...

power ldmos transistor,1400w,128mhz,broadcast,hf/vhf(blf178xr)
Specification: A 1400 W extremely rugged LDMOS power transistor for broadcast a
Detail: Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability BLF178XR Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002...


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